| PART |
Description |
Maker |
| CXD8813Q |
C-MOS GATE ARRAY
|
ETC
|
| UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
Channelless type CMOS gate array using 0.35um process
|
NEC
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| XC4000E-SERIES XC4000X-SERIES XC4005E-4PC84C XC400 |
Programmable Gate Arrays
Field programmable gate array.
|
Xilinx
|
| APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| MSM76V000 |
Gate Array
|
OKI electronic components
|
| FGC1200-LCC84C FGC2400-LCC44C FGC0500-DIP40P FGC12 |
Gate Array 门阵
|
Everlight Electronic Co., Ltd.
Samsung Semiconductor Co., Ltd.
Cypress Semiconductor, Corp.
Carlo Gavazzi
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
